■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STB18N60M6
간략설명	N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 13 A
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 280 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.75V Minimum Gate Threshold Voltage = 3.25V Maximum Power Dissipation = 110 W Transistor Configuration = Single Maximum Gate Source Voltage = ±25 V Width = 9.35mm
높이 = 4.37mm The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.Reduced switching losses Lower RDS(on) per area vs previous generation Low gate input resistance Zener-protected