■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STL26N60DM6
간략설명	N-Channel MOSFET Transistor, 15 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STMicroelectronics STL26N60DM6

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 15 A Maximum Drain Source Voltage = 600 V
패키지 = PowerFLAT 8 x 8 HV
장착형태 = Surface Mount
핀수 = 5 Maximum Drain Source Resistance = 215 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.75V Minimum Gate Threshold Voltage = 3.25V Maximum Power Dissipation = 110 W Transistor Configuration = Single Maximum Gate Source Voltage = ±25 V
최대 작동 온도 = +150 °C
최소 작동 온도 = -55 °C This high-voltage N-channel Power MOSFET is part of the MDmesh??DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance Extremely high dv/dt ruggedness Zener-protected