■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STGWT20H65FB
간략설명	STMicroelectronics STGWT20H65FB IGBT, 40 A 650 V, 3-Pin TO, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 168 W
패키지 = TO
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Transistor Configuration = Single
크기 = 15.8 x 5 x 20.1mm
최소 작동 온도 = -55 °C These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.Maximum junction temperature: TJ= 175 °C High speed switching series Minimized tail current VCE(sat)= 1.55 V (typ.) @ IC= 20 A Tight parameters distribution Safe paralleling Low thermal resistance Lead free package