■ 제품필수정보

제조사	STMicroelectronics
제조사품명	TN2010H-6G
간략설명	STMicroelectronics TN2010H-6G, Thyristor 600V, 12.7A 10mA

■ 제품사양

Rated Average On-State Current = 12.7A Thyristor
타입 = SCR
패키지 = D2PAK Repetitive Peak Reverse Voltage = 600V Surge
Current 등급 = 180A
장착형태 = Surface Mount Maximum Gate Trigger Current = 10mA Maximum Gate Trigger Voltage = 1.3V Maximum Holding Current = 40mA
핀수 = 3
크기 = 10.28 x 9.35 x 4.6mm
최소 작동 온도 = -40 °C This device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. Its D²PAK package allows modern SMD designs as well as compact back to back configuration.The combination of noise immunity and low gate triggering current allows to design strong and compact control circuits.High junction temperature: Tj = 150 °C High noise immunity dV/dt = 400 V/μs up to 150 °C Gate triggering current IGT = 10 mA Peak off-state voltage VDRM/VRRM = 600 V High turn on current rise dI/dt = 100 A/μs