■ 제품필수정보

제조사	Wolfspeed
제조사품명	C3M0075120D
간략설명	SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 Wolfspeed C3M0075120D

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 75 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 1.7V Maximum Power Dissipation = 113.6 W Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, 19 V Width = 5.21mm
높이 = 21.1mm Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.Minimum of 1200V Vbr across entire operating temperature range High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive