■ 제품필수정보

제조사	Wolfspeed
제조사품명	C3M0075120K
간략설명	SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 75 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.6V Minimum Gate Threshold Voltage = 1.8V Maximum Power Dissipation = 113.6 W Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, 19 V Typical Gate Charge @ Vgs = 53 nC @ 4/15V
높이 = 23.6mm Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.Minimum of 1200V Vbr across entire operating temperature range New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive