■ 제품필수정보

제조사	Wolfspeed
제조사품명	C3M0120090J
간략설명	SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 22 A Maximum Drain Source Voltage = 900 V
패키지 = TO-263-7
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 120 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 1.8V Maximum Power Dissipation = 83 W Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, 18 V Typical Gate Charge @ Vgs = 17.3 nC @ 4/15V
높이 = 4.57mm Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry??s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.New low-impedance package with driver source High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive