■ 제품필수정보
제조사 |
ROHM |
제조사품명 |
SCT3030ARC14 |
간략설명 |
SiC N-Channel MOSFET, 70 A, 650 V, 4-Pin TO-247-4 ROHM SCT3030ARC14 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 70 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 39 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5.6V Minimum Gate Threshold Voltage = 2.7V Maximum Power Dissipation = 262 W Transistor Configuration = Single Maximum Gate Source Voltage = 22 V
칩당 요소 수 = 1 SCT3030AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver source terminal is improving high-speed switching performance.Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating High efficiency 4pin package Evaluation board P02SCT3040KR-EVK-001 Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives