■ 제품필수정보

제조사	Onsemi
제조사품명	NVHL080N120SC1
간략설명	SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 onsemi NVHL080N120SC1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 44 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 162 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.3V Minimum Gate Threshold Voltage = 1.8V Maximum Power Dissipation = 348 W Transistor Configuration = Single Maximum Gate Source Voltage = -15 V, +25 V Width = 4.82mm
높이 = 20.82mm Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.1200V rated Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A High Speed Switching and Low Capacitance Devices are Pb-Free Applications PFC OBC End Products Automotive DC/DC converter for EV/PHEV Automotive On Board Charger Automotive Auxiliary Motor Drive