■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STD13N60DM2
간략설명	N-Channel MOSFET, 11 A, 3-Pin DPAK STMicroelectronics STD13N60DM2

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 11 A
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 360 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 110 W Transistor Configuration = Single Maximum Gate Source Voltage = ±25 V Width = 6.2mm Forward Diode Voltage = 1.6V This high-voltage N-channel Power MOSFET is part of the MDmesh??DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance Extremely high dv/dt ruggedness Zener-protected Applications Switching applications