■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STB12NM50T4
간략설명	N-Channel MOSFET, 12 A, 3-Pin D2PAK STMicroelectronics STB12NM50T4

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 12 A
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 350 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 160 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 9.35mm
높이 = 4.37mm The MDmesh??is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company??s PowerMESH??horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company??s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition??s products.High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Tight process control and high manufacturing yields Low gate input resistance Applications Switching application