■ 제품필수정보

제조사	STMicroelectronics
제조사품명	BUL1102EFP
간략설명	STMicroelectronics BUL1102EFP NPN Bipolar Transistor, 8 A, 450 V, 3-Pin TO-220FP

■ 제품사양

Transistor
타입 = NPN Maximum DC Collector Current = 8 A Maximum Collector Emitter Voltage = 450 V
패키지 = TO-220FP
장착형태 = Through Hole Maximum Power Dissipation = 70 W Transistor Configuration = Single Maximum Emitter Base Voltage = 12 V
핀수 = 3
칩당 요소 수 = 1
크기 = 10.4 x 4.6 x 16.4mm This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil??protection usually necessary in typical converters for lamp ballast.High voltage capability Very high switching speed Applications Four lamp electronic ballast for: 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration