■ 제품필수정보
제조사 |
Vishay |
제조사품명 |
SUP60020E-GE3 |
간략설명 |
N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB Vishay SUP60020E-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 150 A Maximum Drain Source Voltage = 80 V
패키지 = TO-220AB
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 2.8 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 375 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 4.65mm Forward Diode Voltage = 1.5V N-Channel 80 V (D-S) MOSFET.TrenchFET® power MOSFET Maximum 175 °C junction temperature Very low Qgd reduces power loss from passing through Vplateau