■ 제품필수정보

제조사	Vishay
제조사품명	SiSS61DN-T1-GE3
간략설명	P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 111.9 A Maximum Drain Source Voltage = 20 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 9.8 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.9V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 65.8 W Transistor Configuration = Single Maximum Gate Source Voltage = ±8 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.2V P-Channel 20 V (D-S) MOSFET.TrenchFET® Gen III p-channel power MOSFET Leadership RDS(on) in compact and thermally enhanced package