■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SQ1922AEEH-T1_GE3 |
| 간략설명 |
Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 850 mA Maximum Drain Source Voltage = 20 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 530 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 1.5 W Maximum Gate Source Voltage = ±12 V Width = 1.35mm
높이 = 1mm
