■ 제품필수정보

제조사	Vishay
제조사품명	SIHG21N80AE-GE3
간략설명	N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AC Vishay SIHG21N80AE-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 17.4 A Maximum Drain Source Voltage = 800 V
패키지 = TO-247AC
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 235 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 32 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 5.31mm
높이 = 20.82mm