■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIHD2N80AE-GE3 |
| 간략설명 |
N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK Vishay SIHD2N80AE-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 2.9 A Maximum Drain Source Voltage = 800 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.9 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 62.5 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 6.22mm
높이 = 2.25mm
