■ 제품필수정보

제조사	Vishay
제조사품명	SiSS92DN-T1-GE3
간략설명	N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 12.3 A Maximum Drain Source Voltage = 250 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 190 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 65.8 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 3.3mm
높이 = 0.78mm N-Channel 250 V (D-S) MOSFET.TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss Leadership RDS(on) and RDS-Coss FOM