■ 제품필수정보

제조사	Vishay
제조사품명	SIHA22N60EF-GE3
간략설명	N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220 Vishay SIHA22N60EF-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 19 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 182 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 33 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C
높이 = 15.3mm