■ 제품필수정보
■ 제품사양
Memory Size = 1Gbit Interface
타입 = Parallel
패키지 = VFBGA
핀수 = 63 Organisation = 128M x 8 bit
장착형태 = Surface Mount Cell
타입 = SLC NAND Minimum Operating Supply Voltage = 2.7 V Maximum Operating Supply Voltage = 3.6 V Block Organisation = Symmetrical Length = 11.1mm
높이 = 0.6mm Width = 9.1mm
크기 = 11.1 x 9.1 x 0.6mm
최대 작동 온도 = +85 °C Density : 1Gbit (Single chip solution) Vcc : 2.7V to 3.6V Bus width : x8 Operating temperature Industrial: -40°C to 85°C Single-Level Cell (SLC) technology. Organization Density: 1G-bit/128M-byte Page size 2,112 bytes (2048 + 64 bytes) Block size 64 pages (128K + 4K bytes) Highest Performance Read performance (Max.) Random read: 25us Sequential read cycle: 25ns Write Erase performance Page program time: 250us(typ.) Block erase time: 2ms(typ.) Endurance 100,000 Erase/Program Cycles(1) 10-years data retention Command set Standard NAND command set Additional command support Copy Back Lowest power consumption Read: 25mA(typ.3V), Program/Erase: 25mA(typ.3V), CMOS standby: 10uA(typ.) Space Efficient Packaging 48-pin standard TSOP1 48-ball VFBGA 63-ball VFBGA1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.Bus Width: x8 Random Read: 25us Page Program Time: 250us(typ.) Block Erase Time: 2ms(typ.)
