■ 제품필수정보
■ 제품사양
Memory Size = 8Gbit Interface
타입 = Parallel
패키지 = VFBGA
핀수 = 63 Organisation = 1024K x 8 bit
장착형태 = Surface Mount Cell
타입 = SLC NAND Minimum Operating Supply Voltage = 1.7 V Maximum Operating Supply Voltage = 1.95 V Block Organisation = Symmetrical Length = 11.1mm
높이 = 0.6mm Width = 9.1mm
크기 = 11.1 x 9.1 x 0.6mm Number of Bits per Word = 8bit Density : 8Gbit (2 chip stacked solution) Vcc : 1.7V to 1.95V Bus width : x8/x16 Operating temperature Industrial: -40°C to 85°C Single-Level Cell (SLC) technology. Organization Density: 8G-bit/1G-byte Page size 2,112 bytes (2048 + 64 bytes) 1,056 words (1024 + 32 words) Block size 64 pages (128K + 4K bytes) 64 pages (64K + 2K words) Highest Performance Read performance (Max.) Random read: 25us Sequential read cycle: 35ns Write Erase performance Page program time: 250us(typ.) Block erase time: 2ms(typ.) Endurance 100,000 Erase/Program Cycles(1) 10-years data retention Command set Standard NAND command set Additional command support Copy Back Two-plane operation Contact Winbond for OTP feature Contact Winbond for Block Lock feature Lowest power consumption Read: 13mA(typ.) Program/Erase: 13mA(typ.) CMOS standby: 20uA(typ.) Space Efficient Packaging 48-pin standard TSOP1 63-ball VFBGA8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.Bus Width: x8 Random Read: 25us Page Program Time: 250us(typ.) Block Erase Time: 2ms(typ.) Support OTP Memory Area
