■ 제품필수정보

제조사	Onsemi
제조사품명	2N6387G
간략설명	onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220

■ 제품사양

Transistor
타입 = NPN Maximum Continuous Collector Current = 10 A dc Maximum Collector Emitter Voltage = 60 V dc Maximum Emitter Base Voltage = 5 V dc
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Transistor Configuration = Single
칩당 요소 수 = 1 Minimum DC Current
이득 = 1000 Maximum Collector Base Voltage = 60 V dc Maximum Collector Emitter Saturation Voltage = 3 V dc
높이 = 15.75mm The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.High DC Current
이득 - hFE=2500 (Typ) @Ic=4.0 Adc Collector-Emitter Sustaining Voltage - @ 100 mAdc, Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388 Collector-Emitter Sustaining Voltage - @ 100 mAdc , Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors T0-220AB Compact Package