■ 제품필수정보
제조사 |
Onsemi |
제조사품명 |
NVHL110N65S3F |
간략설명 |
N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 ON Semiconductor NVHL110N65S3F |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 110 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 240 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.3V SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET??s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.700 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 58 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF) PPAP Capable Typ. RDS(on) = 93 mΩ Higher system reliability at low temperature operation Lower switching loss PPAP Capable Applications HV DC/DC converter End Products On Board Charger DC/DC Converter