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MPN : NVHL110N65S3F

N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 ON Semiconductor NVHL110N65S3F
  • 브랜드

    Onsemi

  • 무원상품코드

    M010955005913

  • 타입별
    TU
  • 주문가능수량

    품 절

  • 최소주문수량450
  • 판매단위450
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 450개 ~ 4,516원

  • 수량단가2 : 900개 ~ 4,418원

  • 수량단가3 : 1800개 ~ 4,320원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Onsemi
제조사품명 NVHL110N65S3F
간략설명 N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 ON Semiconductor NVHL110N65S3F

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 110 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 240 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.3V SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET??s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.700 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 58 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF) PPAP Capable Typ. RDS(on) = 93 mΩ Higher system reliability at low temperature operation Lower switching loss PPAP Capable Applications HV DC/DC converter End Products On Board Charger DC/DC Converter

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