■ 제품필수정보

제조사	Onsemi
제조사품명	NTB110N65S3HF
간략설명	N-Channel MOSFET, 30 A, 650 V, 3-Pin D2PAK onsemi NTB110N65S3HF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 650 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 110 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 240 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Length = 10.67mm
높이 = 4.58mm SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET??s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.700 V @ TJ = 150 °C Ultra Low Gate Charge (Typ. Qg = 62 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF) Excellent body diode performance (low Qrr, robust body diode) Optimized Capacitance Typ. RDS(on) = 98 mΩ Higher system reliability at low temperature operation Lower switching loss Higher system reliability in LLC and Phase shift full bridge circuit Lower peak Vds and lower Vgs oscillation Applications Telecommunication Cloud system Industrial End Products Telecom power Server power EV charger Solar / UPS