■ 제품필수정보

제조사	Onsemi
제조사품명	FDMS1D2N03DSD
간략설명	Dual N-Channel MOSFET, 70 A, 164 A, 30 V, 8-Pin PQFN 5 x 6 onsemi FDMS1D2N03DSD

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 70 A, 164 A Maximum Drain Source Voltage = 30 V
패키지 = PQFN 5 x 6
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 1.6 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5 (Q1) V, 3 (Q2) V Minimum Gate Threshold Voltage = 0.8 (Q1) V, 1 (Q2) V Maximum Power Dissipation = 26 W, 42 W Maximum Gate Source Voltage = +16/-12 (Q1, Q2) V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.2V This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.Q1: Max RDS(on) = 3.25 mOhm at Vgs = 10V Q1: Max RDS(on) = 4.0 mOhm at Vgs = 4.5V Q2: Max RDS(on) = 0.97 mOhm at Vgs = 10V Q2: Max RDS(on) = 1.25 mOhm at Vgs = 4.5V Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing Applications Computing Networking Point of Load End Products VGA Cards Telecom Power Supplies Servers