■ 제품필수정보

제조사	Onsemi
제조사품명	FDMA2002NZ
간략설명	Dual N-Channel MOSFET, 2.9 A, 30 V, 6-Pin WDFN onsemi FDMA2002NZ

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 2.9 A Maximum Drain Source Voltage = 30 V
패키지 = WDFN
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 268 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.5V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 1.5 W Maximum Gate Source Voltage = ±12 V Width = 2mm
최소 작동 온도 = -55 °C This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS(ON) = 140 mΩ @ VGS = 3.0 V RDS(ON) = 163 mΩ @ VGS = 2.5 V Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm HBM ESD protection level=1.8kV (Note 3) Free from halogenated compounds and antimony oxides Applications This product is general usage and suitable for many different applications