■ 제품필수정보

제조사	OSI Optoelectronics
제조사품명	OSD60-5T
간략설명	OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

■ 제품사양

Spectrums Detected = Infrared Wavelength of Peak Sensitivity = 436nm
패키지 = TO-8
장착형태 = Through Hole Number of Pins = 3 Diode Material = Si Minimum Wavelength Detected = 350nm Maximum Wavelength Detected = 1100nm
높이 = 0.17in Diameter = 13.97mm
시리즈 = OSD The Photoconductive Detector
시리즈 are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or chopped light.To achieve high speeds, these detectors should be reverse biased. Typical response times from 10 ns to 250 ns can be achieved with a 10V reverse bias, for example. When a reverse bias is applied, capacitance decreases (as seen in the figure below) corresponding directly to an increase in speed. As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will result in permanent damage to the detector.Since a reverse bias generates additional dark current, the noise in the device will also increase with applied bias. For lower noise detectors, the Photovoltaic
시리즈 should be considered.High Speed Response Low Capacitance Low Dark Current Wide Dynamic Range High Responsivity APPLICATIONS Pulse Detectors Optical Communications Bar Code Readers Optical Remote Control Medical Equipment High Speed Photometry