■ 제품필수정보

제조사	ROHM
제조사품명	RS1P600BETB1
간략설명	N-Channel MOSFET, 60 A, 100 V, 8-Pin HSOP8 ROHM RS1P600BETB1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 100 V
패키지 = HSOP8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 9.7 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 35 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 5mm
높이 = 1.05mm RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters.Low on - resistance Small Surface Mount Package Pb-free lead plating Halogen free