■ 제품필수정보
제조사 |
DiodesZetex |
제조사품명 |
DGTD120T25S1PT |
간략설명 |
DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole |
■ 제품사양
Maximum Continuous Collector Current = 50 A, 100 (Pulsed) A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Transistor Configuration = Single
크기 = 16.26 x 5.31 x 21.46mm Gate Capacitance = 3942pF The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat), excellent quality and high-switching performance.High Speed Switching & Low VCE(sat) Loss VCE(sat) = 2.0V @ IC = 25A High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/μs Ultra-Soft, Fast Recovery Anti-parallel Diode Ultra Narrowed VF Distribution Control Positive Temperature Coefficient For Easy Parallelling Maximum Junction Temperature 175°C Lead-free finish Halogen and Antimony Free. ??Green?? Device Applications Motor Drive UPS Welder Solar Inverter IH Cooker