■ 제품필수정보

제조사	Infineon
제조사품명	CY7C1041GN30-10BVXI
간략설명	Infineon SRAM Memory Chip, CY7C1041GN30-10BVXI- 4Mbit

■ 제품사양

Memory Size = 4Mbit Organisation = 256k x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns High speed tAA = 10 ns / 15 ns Low active and standby currents Active current: ICC = 38-mA typical Standby current: ISB2 = 6-mA typical Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V 1.0-V data retention TTL-compatible inputs and outputs Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA packages