■ 제품필수정보

제조사	Infineon
제조사품명	CY7C1061GE30-10ZSXI
간략설명	Infineon SRAM Memory Chip, CY7C1061GE30-10ZSXI- 16Mbit

■ 제품사양

Memory Size = 16Mbit Organisation = 1M x 16 bit Number of Words = 1M Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 100MHz Low Power = Yes Timing
타입 = Asynchronous
장착형태 = Surface Mount
패키지 = TSOP
핀수 = 54
크기 = 22.51 x 10.26 x 1.05mm Maximum Operating Supply Voltage = 3.6 V Width = 10.26mm CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.High speed tAA = 10 ns/15 ns Embedded error-correcting code (ECC) for single-bit error correction[1, 2] Low active and standby currents ICC = 90 mA typical at 100 MHz ISB2 = 20 mA typical Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V 1.0 V data retention Transistor-transistor logic (TTL) compatible inputs and outputs Error indication (ERR) pin to indicate 1-bit error detection and correction Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages