■ 제품필수정보

제조사	Onsemi
제조사품명	FGH75T65SQDNL4
간략설명	onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 375 W
패키지 = TO-247
장착형태 = Through Hole Channel
타입 = P
핀수 = 4 Switching Speed = 1MHz Transistor Configuration = Single
크기 = 15.8 x 5.2 x 22.74mm
최대 작동 온도 = +175 °C This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO??47??L package that provides significant reduction in Eon Losses compared to standard TO??47??L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co??packaged free wheeling diode with a low forward voltage.Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO-247-4L for Minimal Eon Losses Optimized for High Speed Switching These are Pb-Free Devices Solar Inverter Uninterruptible Power Inverter Supplies Neutral Point Clamp Topology