■ 제품필수정보

제조사	Onsemi
제조사품명	FDP4D5N10C
간략설명	N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 onsemi FDP4D5N10C

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 128 A Maximum Drain Source Voltage = 100 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 4.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 150 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 4.67mm
높이 = 15.21mm This N-Channel MV MOSFET is produced using ON Semiconductor??s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance High Performance Trench Technology for Extremely Low RDS(on) High power density with Shielded gate technology Extremely Low Reverse Recovery Charge, Qrr Low Vds spike internal snubber function. Low Gate Charge, QG = 48nC (Typ.) Low switching loss High Power and Current Handling Capability Low Qrr/Trr Soft recovery performance Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies. Motor drives and Uninterruptible Power Supplies Micro Solar Inverter Server Telecom Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.) Motor Drive Uninterruptible Power Supplies Solar Inverter