■ 제품필수정보
제조사 |
ROHM |
제조사품명 |
HP8S36TB |
간략설명 |
Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 27 A, 80 A Maximum Drain Source Voltage = 30 V
패키지 = HSOP8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 13.3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1.3V Maximum Power Dissipation = 22 W, 29 W Maximum Gate Source Voltage = ±128 V, ±20 V Width = 5.8mm
높이 = 1.1mm HP8S36 is low on-resistance MOSFET for switching application.Low on - resistance Pb-free lead plating Halogen Free Built in Schottky-barrier diode(Tr2)