■ 제품필수정보
| 제조사 |
Onsemi |
| 제조사품명 |
MJD31C1G |
| 간략설명 |
onsemi MJD31C1G NPN Bipolar Transistor, 3 A, 100 V, 4-Pin IPAK |
■ 제품사양
Transistor
타입 = NPN Maximum DC Collector Current = 3 A Maximum Collector Emitter Voltage = 100 V
패키지 = IPAK
장착형태 = Through Hole Maximum Power Dissipation = 15 W Minimum DC Current
이득 = 10 Transistor Configuration = Single Maximum Collector Base Voltage = 100 V dc Maximum Emitter Base Voltage = 5 V Maximum Operating Frequency = 1 MHz
핀수 = 4
칩당 요소 수 = 1
크기 = 6.73 x 2.38 x 6.22mm Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. NPN Power Transistors, ON Semiconductor
