■ 제품필수정보

제조사	Onsemi
제조사품명	FCP165N65S3
간략설명	N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 19 A Maximum Drain Source Voltage = 650 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 165 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 154 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C
높이 = 16.3mm SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.700 V @ TJ = 150 °C Ultra Low Gate Charge (Typ. Qg = 39 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF) Internal Gate Resistance: 4.6 Ω Optimized Capacitance Typ. RDS(on) = 140 mΩ Benefits: Higher system reliability at low temperature operation Lower switching loss Lower switching loss Lower peak Vds and lower Vgs oscillation Lower peak Vds and lower Vgs oscillation Applications: Computing Consumer Industrial End Products: Notebook / Desktop computer Game Console Telecom / Server LCD / LED TV LED Lighting / Ballast Adapter