■ 제품필수정보

제조사	Onsemi
제조사품명	FCD360N65S3R0
간략설명	N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 10 A Maximum Drain Source Voltage = 650 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 360 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 83 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.2V SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.700 V @ TJ = 150 °C Ultra Low Gate Charge (Typ. Qg = 18 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF) Optimized Capacitance Internal Gate Resistance: 1 Ω Typ. RDS(on) = 310 mΩ Benefits: Higher system reliability at low temperature operation Lower switching loss Lower switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Consumer Industrial End Products: Notebook / Desktop computer / Game console Telecom / Server LCD / LED TV LED Lighting / Ballast Adapter