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MPN : NTB082N65S3F

N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F
  • 브랜드

    Onsemi

  • 무원상품코드

    M010846007854

  • 타입별
    RL
  • 주문가능수량

    품 절

  • 최소주문수량800
  • 판매단위800
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 800개 ~ 8,243원

  • 수량단가2 : 1600개 ~ 7,995원

  • 수량단가3 : 3200개 ~ 7,755원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Onsemi
제조사품명 NTB082N65S3F
간략설명 N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 650 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 82 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 313 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C
최소 작동 온도 = -55 °C SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.Features 700 V @ TJ = 150 Ultra Low Gate Charge (Typ. Qg = 81 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) Optimized Capacitance Excellent body diode performance (low Qrr, robust body diode) Typ. RDS(on) = 70 mΩ Benefits: Higher system reliability at low temperature operation Lower switching loss Lower switching loss Lower peak Vds and lower Vgs oscillation Higher system reliability in LLC and Phase shift full bridge circuit Applications: Telecommunication Cloud system Industrial End Products: Telecom power Server power Solar / UPS EV charger

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