■ 제품필수정보

제조사	Onsemi
제조사품명	FDMS4D0N12C
간략설명	N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 67 A Maximum Drain Source Voltage = 120 V
패키지 = PQFN 5 x 6
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 4 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 106 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 6mm
높이 = 1.05mm This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.Shielded Gate MOSFET Technology Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI MSL1 Robust Package Design Applications: This product is general usage and suitable for many different applications. End Products: AC-DC and DC-DC Power Supplies