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MPN : FCP125N65S3R0

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 onsemi FCP125N65S3R0
  • 브랜드

    Onsemi

  • 무원상품코드

    M010846007850

  • 타입별
    TU
  • 주문가능수량

    품 절

  • 최소주문수량50
  • 판매단위50
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 50개 ~ 4,248원

  • 수량단가2 : 100개 ~ 4,155원

  • 수량단가3 : 200개 ~ 4,062원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Onsemi
제조사품명 FCP125N65S3R0
간략설명 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 onsemi FCP125N65S3R0

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 24 A Maximum Drain Source Voltage = 650 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 125 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 181 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C
최소 작동 온도 = -55 °C SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.700 V @ TJ = 150 °C Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF) Ultra Low Gate Charge (Typ. Qg = 46 nC) Optimized Capacitance Typ. RDS(on) = 105 mΩ Internal Gate Resistance: 0.5 Ω Benefits: Higher system reliability at low temperature operation Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Consummer Industrial End Products: Notebook / Desktop computer / Game console Telecom / Server LCD / LED TV LED Lighting / Ballast Adapter

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