■ 제품필수정보
제조사 |
Onsemi |
제조사품명 |
FCH125N65S3R0-F155 |
간략설명 |
N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 onsemi FCH125N65S3R0-F155 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 24 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 125 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 181 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
칩당 요소 수 = 1
높이 = 20.82mm SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.700 V @ TJ = 150 oC Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF) Ultra Low Gate Charge (Typ. Qg = 46 nC) Optimized Capacitance Typ. RDS(on) = 105 mΩ Internal Gate Resistance: 0.5 Ω Benefits: Higher system reliability at low temperature operation Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Consumer Industrial End Products: Notebook / Desktop computer / Game console Telecom / Server UPS / Solar LED Lighting / Ballast