■ 제품필수정보

제조사	Onsemi
제조사품명	FCD360N65S3R0
간략설명	N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 10 A Maximum Drain Source Voltage = 650 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 360 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 83 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Typical Gate Charge @ Vgs = 18 nC @ 10 V
높이 = 2.39mm