■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SiS110DN-T1-GE3
간략설명	N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 14.2 A Maximum Drain Source Voltage = 100 V
패키지 = PowerPAK 1212-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 70 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 4V Maximum Power Dissipation = 24 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Typical Gate Charge @ Vgs = 8.5 nC @ 10 V
높이 = 1.07mm TrenchFET® Gen IV power MOSFET Tuned for the lowest RDS - Qoss FOM