■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SiDR622DP-T1-GE3
간략설명	N-Channel MOSFET, 64.6 A, 150 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR622DP-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 64.6 A Maximum Drain Source Voltage = 150 V
패키지 = PowerPAK SO-8DC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 20 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 125 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Typical Gate Charge @ Vgs = 27 nC @ 10 V
높이 = 1.07mm TrenchFET® power MOSFET Top side cooling feature provides additional venue for thermal transfer