■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SiZ350DT-T1-GE3
간략설명	Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 30 V
패키지 = PowerPAIR 3 x 3
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 9 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 2.4V Maximum Power Dissipation = 16.7 W Maximum Gate Source Voltage = -12 V, +16 V
칩당 요소 수 = 2
높이 = 0.75mm