■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SQS966ENW-T1_GE3
간략설명	Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS966ENW-T1_GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 6 A Maximum Drain Source Voltage = 60 V
패키지 = PowerPAK 1212-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 60 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 27.8 W Maximum Gate Source Voltage = ±20 V Width = 3.15mm
높이 = 1.07mm TrenchFET® power MOSFET