■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SQJ431AEP-T1_GE3
간략설명	P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ431AEP-T1_GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 9.4 A Maximum Drain Source Voltage = 200 V
패키지 = PowerPAK SO-8L
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 760 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 68 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 5mm Forward Diode Voltage = 1.2V TrenchFET® power MOSFET