■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SQ2364EES-T1_GE3
간략설명	N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 2 A Maximum Drain Source Voltage = 60 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 600 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.46V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 3 W Transistor Configuration = Single Maximum Gate Source Voltage = ±8 V Width = 1.4mm Forward Diode Voltage = 1.2V TrenchFET® power MOSFET