■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SiA106DJ-T1-GE3
간략설명	N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 60 V
패키지 = SC-70-6L
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 20 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 19 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Typical Gate Charge @ Vgs = 8.9 nC @ 10 V Forward Diode Voltage = 1.2V TrenchFET® Gen IV power MOSFET Very low RDS - Qg Figure-of-Merit (FOM) Tuned for the lowest RDS ??Qoss