■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	Si2319DDS-T1-GE3
간략설명	P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 3.6 A Maximum Drain Source Voltage = 40 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 100 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 1.7 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 1.4mm
높이 = 1.02mm TrenchFET® Gen III p-channel power MOSFET